Fin field effect transistor having airgap and method for manufacturing the same

ABSTRACT

A method of manufacturing a FinFET includes at last the following steps. A semiconductor substrate is patterned to form trenches in the semiconductor substrate and semiconductor fins located between two adjacent trenches of the trenches. Gate stacks is formed over portions of the semiconductor fins. Strained material portions are formed over the semiconductor fins revealed by the gate stacks. First metal contacts are formed over the gate stacks, the first metal contacts electrically connecting the strained material portions. Air gaps are formed in the FinFET at positions between two adjacent gate stacks and between two adjacent strained materials.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of U.S. provisionalapplication Ser. No. 62/712,230, filed on Jul. 31, 2018. The entirety ofthe above-mentioned patent application is hereby incorporated byreference herein and made a part of this specification.

BACKGROUND

As the semiconductor devices keeps scaling down in size,three-dimensional multi-gate structures, such as the fin-type fieldeffect transistor (FinFET), have been developed to replace planarComplementary Metal Oxide Semiconductor (CMOS) devices. A structuralfeature of the FinFET is the silicon-based fin that extends upright fromthe surface of the semiconductor substrate, and the gate wrapping aroundthe conducting channel that is formed by the fin further provides abetter electrical control over the channel.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A to FIG. 1S are perspective views illustrating a manufacturingmethod of a FinFET in accordance with some embodiments of thedisclosure.

FIG. 2A to FIG. 2S are cross-sectional views of the FinFET depicted inFIG. 1A to FIG. 1S.

FIG. 3 is a cross-sectional view illustrating a FinFET in accordancewith some embodiments of the disclosure.

FIG. 4A to FIG. 4G are perspective views illustrating a manufacturingmethod of a FinFET in accordance with some embodiments of thedisclosure.

FIG. 5A to FIG. 5G are cross-sectional views of the FinFET depicted inFIG. 4A to FIG. 4G.

FIG. 6 is a cross-sectional view illustrating a FinFET in accordancewith some embodiments of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The fins may be patterned by any suitable method. For example, the finsmay be patterned using one or more photolithography processes, includingdouble-patterning or multi-patterning processes. Generally,double-patterning or multi-patterning processes combine photolithographyand self-aligned processes, allowing patterns to be created that have,for example, pitches smaller than what is otherwise obtainable using asingle, direct photolithography process. For example, in one embodiment,a sacrificial layer is formed over a substrate and patterned using aphotolithography process. Spacers are formed alongside the patternedsacrificial layer using a self-aligned process. The sacrificial layer isthen removed, and the remaining spacers may then be used to pattern thefins.

The embodiments of the present disclosure describe the exemplarymanufacturing process of one or more FinFETs and the FinFETs fabricatedthere-from, where the FinFETs may also referred to as a semiconductordevice herein. The FinFET may be formed on bulk silicon substrates incertain embodiments of the present disclosure. Still, the FinFET may beformed on a silicon-on-insulator (SOI) substrate as alternatives. Also,in accordance with the embodiments, the silicon substrate may includeother conductive layers or other semiconductor elements, such astransistors, diodes or the like. The embodiments are not limited in thiscontext.

FIG. 1A to FIG. 1S are perspective views illustrating a manufacturingmethod of a FinFET in accordance with some embodiments of thedisclosure. FIG. 2A to FIG. 2S are cross-sectional views of the FinFETdepicted in FIG. 1A to FIG. 1S, respectively. FIG. 3 is across-sectional view illustrating a FinFET in accordance with someembodiments of the disclosure. Referring to FIG. 1A and FIG. 2A, in someembodiments, a semiconductor substrate 200 is provided. In someembodiments, the semiconductor substrate 200 includes a crystallinesilicon substrate (e.g., wafer). The semiconductor substrate 200 mayinclude various doped regions depending on design requirements (e.g.,p-type semiconductor substrate or n-type semiconductor substrate). Insome embodiments, the doped regions may be doped with p-type or n-typedopants. For example, the doped regions may be doped with p-typedopants, such as boron or BF₂; n-type dopants, such as phosphorus orarsenic; and/or combinations thereof. The doped regions may beconfigured for an n-type FinFET, or alternatively configured for ap-type FinFET. In some alternative embodiments, the semiconductorsubstrate 200 may be made of some other suitable elementalsemiconductor, such as diamond or germanium; a suitable compoundsemiconductor, such as gallium arsenide, silicon carbide, indiumarsenide, or indium phosphide; or a suitable alloy semiconductor, suchas silicon germanium carbide, gallium arsenic phosphide, or galliumindium phosphide.

In some embodiments, a pad layer 202 a and a mask layer 202 b aresequentially formed on the semiconductor substrate 200. The pad layer202 a may be a silicon oxide thin film formed by, for example, a thermaloxidation process. The pad layer 202 a may act as an adhesion layerbetween the semiconductor substrate 200 and the mask layer 202 b. Thepad layer 202 a may also act as an etch stop layer for etching the masklayer 202 b. In some embodiments, the mask layer 202 b is a siliconnitride layer formed by, for example, low-pressure chemical vapordeposition (LPCVD) or plasma enhanced chemical vapor deposition (PECVD).The mask layer 202 b is used as a hard mask during subsequentphotolithography processes. A patterned photoresist layer 204 having apredetermined pattern is formed on the mask layer 202 b.

Referring to FIG. 1B and FIG. 2B, in some embodiments, the mask layer202 b and the pad layer 202 a which are not covered by the patternedphotoresist layer 204 are sequentially etched to form a patterned masklayer 202 b′ and a patterned pad layer 202 a′, and the underlyingsemiconductor substrate 200 is exposed. By using the patterned masklayer 202 b′, the patterned pad layer 202 a′, and the patternedphotoresist layer 204 as a mask, portions of the semiconductor substrate200 are exposed and etched to form trenches 206 and semiconductor fins208. The semiconductor fins 208 are covered by the patterned mask layer202 b′, the patterned pad layer 202 a′, and the patterned photoresistlayer 204. Two adjacent trenches 206 are spaced apart by a spacing. Inother words, two adjacent trenches 206 are spaced apart by acorresponding semiconductor fin 208, and each of the semiconductor fins208 is located between two adjacent trenches 206. After the trenches 206and the semiconductor fins 208 are formed, the patterned photoresistlayer 204 is then removed. In some embodiments, a cleaning process maybe performed to remove native oxides of the semiconductor substrate 200a and the semiconductor fins 208. The cleaning process may be performedusing diluted hydrofluoric (DHF) acid or other suitable cleaningsolutions. In FIG. 1B and FIG. 2B, two semiconductor fins 208 are shownfor illustration purpose, and the disclosure is not limited thereto. Inother embodiments, the number of the semiconductor fins 208 may be oneor more than one.

Referring to FIG. 1C and FIG. 2C, in some embodiments, an insulatingmaterial 210 is formed over the semiconductor substrate 200 a to coverthe semiconductor fins 208 and to fill up the trenches 206. In additionto the semiconductor fins 208, the insulating material 210 furthercovers the patterned pad layer 202 a′ and the patterned mask layer 202b′. The insulating material 210 may include silicon oxide, siliconnitride, silicon oxynitride, silicon carbonitride, silicon carbideoxynitride, a spin-on dielectric material (such as spin-on glass (SOG)),or a low-K dielectric material. It should be noted that the low-Kdielectric materials are generally dielectric materials having adielectric constant lower than 3.9. The insulating material 210 may beformed by high-density-plasma chemical vapor deposition (HDP-CVD),sub-atmospheric CVD (SACVD), or spin-on coating.

Referring to FIG. 1D and FIG. 2D, in some embodiments, a chemicalmechanical polish (CMP) process is, for example, performed to remove thepatterned mask layer 202 b′, the patterned pad layer 202 a′, and aportion of the insulating material 210 until the semiconductor fins 208are exposed. As shown in FIG. 1D and FIG. 2D, after the insulatingmaterial 210 is polished, a top surface 210T of the polished insulatingmaterial 210 is substantially coplanar with top surfaces T2 of thesemiconductor fins 208.

Referring to FIG. 1E and FIG. 2E, in some embodiments, the polishedinsulating material 210 filled in the trenches 206 is partially removedby an etching process such that insulators 210 a are formed on thesemiconductor substrate 200 a. In some embodiments, each insulator 210 ais located between two adjacent semiconductor fins 208. In other words,the insulators 210 a are located in the trenches 206, respectively. Insome embodiments, the etching process may be a wet etching process withhydrofluoric acid (HF) or a dry etching process. Top surfaces T1 of theinsulators 210 a are lower than the top surfaces T2 of the semiconductorfins 208. In other words, the semiconductor fins 208 protrude from thetop surfaces T1 of the insulators 210 a.

Referring to FIG. 1F and FIG. 2F, in some embodiments, at least onedummy gate stack 212 is formed over portions of the semiconductor fins208 and portion of the insulators 210 a. In some embodiments, as shownin FIG. 1F and FIG. 2F, two dummy gate stacks 212, which are alsodenoted as a dummy gate stack 212R and a dummy gate stack 212L, areshown for illustration purpose, but the disclosure is not limitedthereto. In one embodiment, the number of the dummy gate stacks 212 maybe one or more than one. In some embodiments, the extending direction D1of the dummy gate stacks 212 (e.g. the dummy gate stacks 212R and 212L)is, for example, perpendicular to the extension direction D2 of thesemiconductor fins 208 so as to cover portions M of the semiconductorfins 208. Each of the dummy gate stacks 212 (e.g. the dummy gate stacks212R and 212L) includes a dummy gate dielectric layer 212 a and a dummygate 212 b disposed over the dummy gate dielectric layer 212 a. Forexample, the dummy gates 212 b of the dummy gate stacks 212 are disposedover the portions M of the semiconductor fins 208 and over portions ofthe insulators 210 a.

The dummy gate dielectric layers 212 a of the dummy gate stacks 212 areformed to cover the portions M of the semiconductor fins 208, in someembodiments. In some embodiments, the dummy gate dielectric layers 212 amay include silicon oxide, silicon nitride, silicon oxynitride, siliconcarbonitride, silicon carbide oxynitride, a spin-on dielectric material,or a low-K dielectric material. The dummy gate dielectric layers 212 amay be formed using a suitable process such as HDP-CVD, SACVD, orspin-on coating, or the like. The dummy gates 212 b of the dummy gatestacks 212 are, for example, then formed on the dummy gate dielectriclayers 212 a, respectively. In some embodiments, the dummy gates 212 beach may include a single layer or multi-layered structure. In someembodiments, the dummy gates 212 b may include a silicon-containingmaterial, such as poly-silicon, amorphous silicon or a combinationthereof. The dummy gates 212 b may be formed using a suitable processsuch as atomic layer deposition (ALD), chemical vapor deposition (CVD),physical vapor deposition (PVD), plating, or combinations thereof.

In addition, each of the dummy gate stacks 212 (e.g. the dummy gatestacks 212R and 212L) may further include a pair of spacers 212 cdisposed on sidewalls of the dummy gate dielectric layer 212 a and thedummy gate 212 b. The pair of spacers 212 c may further cover portionsof a respective one of the semiconductor fins 208. The spacers 212 c areformed of dielectric materials, such as silicon oxide, silicon nitridesilicon oxynitride, silicon carbonitride, silicon carbide oxynitride, aspin-on dielectric material (e.g. SOG), or a low-K dielectric material,in some embodiments. In certain embodiments, the materials of thespacers 212 c may be the same as the materials of the gate dielectriclayers 212 a, the disclosure is not limited thereto. The spacers 212 cmay include a single layer or multilayer structure.

In some embodiments, portions of the semiconductor fins 208 that are notcovered by the dummy gate stacks 212 are referred to as exposed portionsE (shown in FIG. 1F) hereinafter. In some embodiments, the exposedportions E of the semiconductor fins 208 located at two opposite sidesof one of the dummy gate stacks 212 (e.g. the dummy gate stacks 212R and212L) constitute source/drain regions 220 of the semiconductor fins 208with respect to the respective one of the dummy gate stacks 212. In oneembodiment, each of the semiconductor fins 208 covered by the dummy gatestacks 212 (e.g. the dummy gate stacks 212R and 212L) may have its ownsource/drain regions 220 located at two opposite sides of a respectiveone of the dummy gate stacks 212. In other words, for example, each ofthe dummy gate stacks 212 has its own source/drain regions 220, and noneof the source/drain regions 220 of the semiconductor fins 208 iscommonly shared by any two adjacent dummy gate stacks 212. However, thedisclosure is not limited thereto.

In an alternative embodiment, as shown in FIG. IF and FIG. 2F, theexposed portions E of the semiconductor fins 208 located between twoadjacent dummy gate stacks 212 may simultaneously constitute thesource/drain regions 220 of the dummy gate stacks 212 (e.g. the dummygate stacks 212R and 212L), which is shared by the dummy gate stacks 212(e.g. the dummy gate stacks 212R and 212L). In other words, thesource/drain regions 220 sandwiched between the semiconductor fins 208covered by the dummy gate stacks 212R and the semiconductor fins 208covered by the dummy gate stacks 212L are commonly shared by the dummygate stacks 212R and the dummy gate stacks 212L. Noted that, thesource/drain regions 220 commonly shared by the two adjacent dummy gatestacks, the dummy gate stacks 212R and the dummy gate stacks 212L, isreferred to as the shared source/drain regions 220S.

Referring to FIG. 1G and FIG. 2G, in some embodiments, strainedmaterials 214 are grown over the exposed portions E of the semiconductorfins 208 to strain or stress the semiconductor fins 208. In someembodiments, the strained materials 214 are grown on the exposedportions E of the semiconductor fins 208 at two opposite sides of one ofthe dummy gate stacks 212 (e.g. the dummy gate stacks 212R and 212L).For example, the strained materials 214 are located at two oppositesides of the dummy gate stacks 212R and 212L, where some of the strainedmaterials 214 are located between the dummy gate stacks 212R and 212L.In other words, some of the strained materials 214 are formed over thesource/drain regions 220 of the semiconductor fins 208 to serve as thesource of a semiconductor device or the drain of a semiconductor devicewhile some of the strained materials 214 are formed over the sharedsource/drain regions 220S of the semiconductor fins 208 to serve as theshared source/drain of the respective two adjacent semiconductordevices, as shown in FIG. 1G and FIG. 2G. The strained materials 214formed over the shared source/drain regions 220S of the semiconductorfins 208 for serving as the shared source/drain may be referred to asthe shared strained materials 214S.

However, the disclosure is not limited thereto; and in an alternativeembodiment, some of the strained materials 214 may be considered as asource of the semiconductor device while some of the strained materials214 may be considered as a drain of the semiconductor device, wherethere is no shared source/drain for two adjacent semiconductor devices.In other words, each of the semiconductor fins 208 covered by the dummygate stacks 212 (e.g. the dummy gate stacks 212R and 212L) may have itsown corresponding strained materials 214 located at two opposite sidesof a respective one of the dummy gate stacks 212, thus suchsemiconductor device may have its own source and drain.

The strained materials 214 may be doped with a conductive dopant. Insome embodiments, the strained materials 214, such as SiGe, areepitaxial-grown with a p-type dopant for straining a p-type FinFET. Thatis, the strained materials 214 are doped with the p-type dopant to bethe source and the drain of the p-type FinFET. The p-type dopantincludes boron or BF₂, and the strained materials 214 may beepitaxial-grown by LPCVD process with in-situ doping. However, thedisclosure is not limited thereto. In some alternative embodiments, thestrained materials 214, such as SiC, are epitaxial-grown with an n-typedopant for straining an n-type FinFET. That is, the strained materials214 are doped with the n-type dopant to be the source and the drain ofthe n-type FinFET. The n-type dopant includes arsenic and/or phosphorus,and the strained materials 214 may be epitaxial-grown by LPCVD processwith in-situ doping. In some embodiments, the strained materials 214 aregrown to have substantially identical size. For example, the strainedmaterials 214 may be symmetrical to one another. However, the disclosureis not limited thereto. In some alternative embodiments, the strainedmaterials 214 may be grown to have different sizes. In some embodiments,the strained materials 214 located at the same side of the dummy gatestacks 212 may be grown to physically connected to each other, which maybe considered as an integral piece.

In some embodiments, before the formation of the strained materials 214,the exposed portions E of the semiconductor fins 208 may be planarizedto the top surfaces T1 of the insulators 210 a, and thus top surfaces ofthe exposed portions E of the semiconductor fins 208 substantiallyleveled with and substantially coplanar to the top surfaces T1 of theinsulators 210 a, as shown FIG. 1G and FIG. 2G. It should be noted thatthe method shown in FIG. 1G and FIG. 2G is merely an exemplaryillustration for forming the strained materials 214, and the disclosureis not limited thereto. In some alternative embodiments, the exposedportions E of the semiconductor fins 208 may be recessed below the topsurfaces T1 of the insulators 210 a, and the strained materials 214 maybe grown from the recessed portion and extend beyond the top surfaces T1of the insulators 210 a to strain or stress the semiconductor fins 208.In further embodiments, the exposed portions E of the semiconductor fins208 may be remained the same, and the strained materials 214 may begrown over the exposed portions E of the semiconductor fins 208 to covertop surfaces and at least portions of sidewalls of the exposed portionsE of the semiconductor fins 208.

Referring to FIG. 1H and FIG. 2H, in some embodiments, an interlayerdielectric (ILD) layer 500 is formed over the insulators 210 a to coverthe strained materials 214. In other words, the interlayer dielectriclayer 500 is formed adjacent to the spacers 212 c, for example. Theinterlayer dielectric layer 500 includes silicon oxide, silicon nitride,silicon oxynitride, silicon carbonitride, silicon carbide oxynitride,SOG, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG),fluorinated silica glass (FSG), carbon doped silicon oxide (e.g.,SiCOH), polyimide, and/or a combination thereof. In some alternativeembodiments, the interlayer dielectric layer 500 may include low-Kdielectric materials. Examples of low-K dielectric materials includeBLACK DIAMOND® (Applied Materials of Santa Clara, Calif.), Xerogel,Aerogel, amorphous fluorinated carbon, Parylene, BCB(bis-benzocyclobutenes), Flare, SILK® (Dow Chemical, Midland, Mich.),hydrogen silsesquioxane (HSQ) or fluorinated silicon oxide (SiOF),and/or a combination thereof. It is understood that the interlayerdielectric layer 500 may include one or more dielectric materials. Insome embodiments, the interlayer dielectric layer 500 is formed to asuitable thickness by Flowable CVD (FCVD), CVD, HDPCVD, SACVD, spin-on,sputtering, or other suitable methods. For example, an interlayerdielectric material layer (not illustrated) is formed to cover theinsulators 210 a and the dummy gate stacks 212 first, then the thicknessof the interlayer dielectric material layer is reduced until topsurfaces of the dummy gate stacks 212 are exposed, so as to form theinterlayer dielectric layer 500. The thickness of the interlayerdielectric material layer may be reduced by a CMP process, an etchingprocess, or other suitable process. As shown in FIG. 1H, the interlayerdielectric layer 500 fills up the gaps between the spacers 212 c,between the strained materials 214, and between the spacers 212 c andthe strained materials 214.

Referring to FIG. 1I and FIG. 2I, in some embodiments, portions of thedummy gate stacks 212 are removed to form hollow portions H exposingportions of the semiconductor fins 208. For example, the dummy gatedielectric layers 212 a and the dummy gates 212 b are removed, and thehollow portions H expose part of the portions M of the semiconductorfins 208. It should be noted that each portion of the semiconductor fins208 exposed by the hollow portions H may act as a channel region 230.

In some embodiments, the dummy gate dielectric layers 212 a and thedummy gates 212 b are removed through an etching process or othersuitable processes. For example, the dummy gate dielectric layers 212 aand the dummy gates 212 b may be removed through wet etching or dryetching. Example of wet etching includes chemical etching and example ofdry etching includes plasma etching, but the disclosure is not limitedthereto. Other commonly known etching method may also be adapted toperform the removal of the dummy gate dielectric layers 212 a and thedummy gates 212 b.

Referring to FIG. 1J and FIG. 2J, in some embodiments, an oxidedielectric layer 216 a-1, a high-k dielectric layer 216 a-2, a workfunction layer 216 b, and a metal layer 216 c are sequentially depositedinto each of the hollow portions H to form gate stacks 216. In someembodiments, as shown in FIG. 1J and FIG. 2J, two gate stacks 216, whichare also denoted as a gate stack 216R and a gate stack 216L, are shownfor illustration purpose, but the disclosure is not limited thereto. Inone embodiment, the number of the gate stacks 216 may be one or morethan one, and may be less than or equal to the number of the dummystacks 212. In some embodiments, the metal layer 216 c is referred to asa gate electrode layer of one gate stack 216, while the oxide dielectriclayer 216 a-1 and the high-k dielectric layer 216 a-2 are togetherreferred to as a gate dielectric layer of the gate electrode layer. Asshown in FIG. 1J, along the direction D2, a cross-sectional view of eachof the oxide dielectric layer 216 a-1, the high-k dielectric layer 216a-2, and the work function layer 216 b is in a form of a U-shapesurrounding the metal layer 216 c.

In some embodiments, the gate stacks 216 are disposed over thesemiconductor fins 208 and on the insulators 210 a. The strainedmaterials 214 are located at two opposite sides of each of the gatestacks 216, where some of the strained materials 214 are located betweentwo adjacent gate stacks 216 (e.g. the gate stack 216R and the gatestack 216L), for example. In some embodiments, each of the gate stacks216 (e.g. the gate stack 216R and the gate stack 216L) includes theoxide dielectric layer 216 a-1, the high-k dielectric layer 216 a-2, thework function layer 216 b, and the metal layer 216 c. In each of thehollow portions H, the oxide dielectric layer 216 a-1 are respectivelydisposed over the channel regions 230 of the semiconductor fins 208, andthe high-k dielectric layer 216 a-2 is disposed on the oxide dielectriclayer 216 a-1, where the oxide dielectric layer 216 a-1 is sandwichedbetween the insulators 210 a and the high-k dielectric layer 216 a-2 andbetween the channel regions 230 of the semiconductor fins 208 and thehigh-k dielectric layer 216 a-2. For example, a material of the oxidedielectric layer 216 a-1 may be silicon dioxide (SiO₂) and may be formedusing a suitable process such as ALD, CVD, or the like, while a materialof the high-k dielectric layer 216 a-2 may be a high k dielectricmaterials, for example, metal oxides, such as HfO, ZrO, AlO, or thelike. In some embodiments, each of the hollow portions H, the workfunction layer 216 b is disposed on the high-k dielectric layer 216 a-2,and the metal layer 216 c is disposed on the work function layer 216 b,where the high-k dielectric layer 216 a-2 is located between the oxidedielectric layer 216 a-1 and the work function layer 216 b, and the workfunction layer 216 b is located between the high-k dielectric layer 216a-2 and the metal layer 216 c. In one embodiment, a material of themetal layer 216 c includes metal, metal alloy, or metal nitride. Forexample, in some embodiments, the metal layer 216 c may include TiN, WN,TaN, Ru, Ti, Ag, Al, TiAl, TiAlN, TaC, TaCN, TaSiN, Mn, or Zr. In someembodiments, a material of the work function layer 216 b may includep-type work function metals, such as TiN, TaN, Ru, Mo, Al, WN, ZrSi₂,MoSi₂, TaSi₂, NiSi₂, WN, other suitable p-type work function materials,or combinations thereof. In some embodiments, the material of the workfunction layer 216 b may include n-type work function metals, such asTi, Ag, TaAl, TaAlC, TiAlN, TaC, TaCN, TaSiN, Mn, Zr, other suitablen-type work function materials, or combinations thereof. In someembodiments, the method of forming the work function layer 216 bincludes performing at least one suitable deposition technique (such asCVD, PECVD, ALD, emote plasma atomic layer deposition (RPALD),plasma-enhanced atomic layer deposition (PEALD), molecular beamdeposition (MBD), or the like) and at least one suitable patterningtechnique (such as photolithography and etching processes). In someembodiments, the work function layer 216 b may serve the purpose ofadjusting threshold voltage (Vt) of the semiconductor device.

In some embodiments, each of the gate stacks 216 may further include abarrier layer (not shown). For example, the barrier layer has a U-shapecross-section similar to the oxide dielectric layer 216 a-1, the high-kdielectric layer 216 a-2, and the work function layer 216 b along thedirection D2, where the barrier layer is sandwiched between the workfunction layer 216 b and the metal layer 216 c. In some embodiments, thebarrier layer is able to block the impurities (e.g. fluorine impurities)from diffusing into the work function layer, thereby avoiding shift inthe threshold voltage of the semiconductor device. In some embodiments,a liner layer, a seed layer, an adhesion layer, or a combination thereofmay be included between the metal layer 216 c of the gate stacks 216 andthe semiconductor fins 208.

Referring to FIG. 1K and FIG. 2K, in some embodiments, a hard mask layer604 is formed over the gate stacks 216 and extended into the hollowportions H. For example, in each hollow portion H along the directionD2, the hard mask layer 604 has a T-shaped cross-section, where the hardmask layer 604 is in contact with top surfaces of the oxide dielectriclayer 216 a-1, the high-k dielectric layer 216 a-2, the work functionlayer 216 b, the metal layer 216 c, and the spacers 212 c. In someembodiments, the hard mask layer 604 includes silicon oxynitride (SiON),silicon carbon nitride (SiCN), or high-K dielectrics. High-K dielectricsincludes metal oxides. It should be noted that the high-K dielectricmaterials are generally dielectric materials having a dielectricconstant greater than 4. Examples of metal oxides used for high-Kdielectrics include oxides of Li, Be, Mg, Ca, Sr, Sc, Y, Zr, Hf, Al, La,Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or mixturesthereof. The hard mask layer 604 may be formed using a suitable processsuch as ALD, CVD, PVD, thermal oxidation, UV-ozone oxidation, orcombinations thereof.

Referring to FIG. 1L and FIG. 2L, in some embodiment, the interlayerdielectric layer 500 is removed to expose the trenches 206, theinsulators 210 a, and the strained materials 214, and a silicide layer400 is then conformally formed on exposed surfaces of the strainedmaterials 214. The removal of the interlayer dielectric layer 500 may beperformed by at least one suitable etching technique, the disclosure isnot limited thereto. In some embodiments, as shown in FIG. 1L, thesilicide layer 400 is conformally formed to be corresponding to theprofiles of the strained materials 214. In some embodiments, thesilicide layer 400 may be conformally formed to be corresponding to theprofiles of the trenches 206, the insulators 210 a, and the strainedmaterials 214. The silicide layer 400 may be formed of silicidematerials and may be formed by PVD, CVD, and ALD. As shown in FIG. 1Land FIG. 2L, the silicide layer 400 wraps around the strained materials214.

Referring to FIG. 1M and FIG. 1M, in some embodiments, an interlayerdielectric layer 502 and an interlayer dielectric layer 602 aresequentially deposited over the gate stacks 216 and the silicide layer400. In some embodiments, the interlayer dielectric layer 502 is formedover the insulators 210 a to cover the silicide layer 400 and thestrained materials 214. In other words, the interlayer dielectric layer502 is formed adjacent to the spacers 212 c and filled up the gapsbetween the gate stacks 216 and the strained materials 214, for example.The formation and material of the interlayer dielectric layer 502 issimilar to the formation and material of the interlayer dielectric layer500, and thus may not be repeated herein. In some embodiments, a surfaceof the interlayer dielectric layer 602 is formed over the interlayerdielectric layer 502 and is substantially levelled with and coplanar toa surface of the hard mask layer 604. As shown in FIG. 1M and FIG. 2M,for example, the interlayer dielectric layer 602 covers the silicidelayer 400 and the strained materials 214 wrapped by the silicide layer400. In some embodiments, the interlayer dielectric layer 602 mayinclude silicon oxide, silicon nitride, silicon oxynitride, PSG, BPSG,SOG, FSG, polyimide, and/or a combination thereof. In some alternativeembodiments, the interlayer dielectric layer 602 may include low-Kdielectric materials. Examples of low-K dielectric materials includeBLACK DIAMOND® (Applied Materials of Santa Clara, Calif.), Xerogel,Aerogel, amorphous fluorinated carbon, Parylene, BCB, Flare, SILK® (DowChemical, Midland, Mich.), HSQ or SiOF, and/or a combination thereof. Itis understood that the interlayer dielectric layer 602 may include oneor more dielectric materials. In some embodiments, the interlayerdielectric layer 602 may be formed to a suitable thickness by FCVD, CVD,HDPCVD, SACVD, spin-on, sputtering, or other suitable methods, and maybe patterned to have the openings O1 through photolithography andetching processes. The disclosure is not specifically limited thereto.

In some embodiments, the materials of the interlayer dielectric layer602 may be the same as the materials of the interlayer dielectric layer500, the interlayer dielectric layer 502, and the spacers 212 c. In someembodiments, the materials of the interlayer dielectric layer 602 may bedifferent from the materials of the interlayer dielectric layer 500, theinterlayer dielectric layer 502, and the spacers 212 c.

Referring to FIG. 1N and FIG. 2N, in some embodiments, a plurality ofopenings O2 are formed in the interlayer dielectric layer 602 and theinterlayer dielectric layer 502 and a plurality of openings O3 areformed in the hard mask layer 604, and the conductive vias 700 a and theconductive vias 700 b are formed in the openings O2 and the openings O3respectively. In some embodiments, as shown in FIG. 1N and FIG. 2N, sixopenings O2 and two openings O3 are shown for illustration purpose, butthe disclosure is not limited thereto. In one embodiment, the number ofthe openings O2 and the number of the openings O3 may be one or morethan one.

For example, the openings O2 each penetrate through the entireinterlayer dielectric layer 602 and a portion of the interlayerdielectric layer 502 to at least partially expose the silicide layers400. In some embodiments, the locations of the openings O2 correspond tothe locations of the strained materials 214. In some embodiments, theopenings O2 expose at least a portion of the silicide layers 400 locatedon the strained materials 214 at the source/drain regions 220 (includingthe shared source/drain regions 220S). Thereafter, conductive vias 700 aare formed in the openings O2 to physically connect to the exposedsilicide layers 400 located on the strained materials 214. In certainembodiments, the conductive vias 700 a are considered as source/draincontacts of the semiconductor device. In some embodiments, theconductive vias 700 a are electrically connected to the strainedmaterials 214 through a respective one silicide layer 400, respectively.For example, as shown in FIG. 1N and FIG. 2N, the silicide layers 400located on the strained materials 214 are directly in contact with theconductive vias 700 a.

In some embodiments, the conductive vias 700 a are formed in theopenings O2 respectively, where top surfaces of the conductive vias 700a are above the top surface of the interlayer dielectric layer 502 andbelow the top surface of the interlayer dielectric layer 602, as shownin FIG. 1N and FIG. 2N. However, the disclosure is not limited thereto.In one embodiment, the conductive vias 700 a may be formed in theopenings O2 respectively, where the top surfaces of the conductive vias700 a are above the top surface of the interlayer dielectric layer 502and substantially levelled with the top surface of the interlayerdielectric layer 602 (see FIG. 4A and FIG. 5A). In an alternativeembodiment, the conductive vias 700 a may be formed in the openings O2respectively, where the top surfaces of the conductive vias 700 a arebelow the top surface of the interlayer dielectric layer 502 and belowthe top surface of the interlayer dielectric layer 602. In a furtheralternative embodiment, the conductive vias 700 a may be formed in theopenings O2 respectively, where the top surfaces of the conductive vias700 a are substantially levelled with the top surface of the interlayerdielectric layer 502 and below the top surface of the interlayerdielectric layer 602.

For example, the openings O3 each penetrate through the entire hard masklayer 604 to expose portions of the metal layers 216 c of the gatestacks 216. In some embodiments, the locations of the openings O3correspond to the locations of the metal layers 216 c. In someembodiments, the openings O3 at least expose portions of the metallayers 216 c. Thereafter, conductive vias 700 b are formed in theopenings O3 to physically connect to the exposed metal layers 216 c. Incertain embodiments, the conductive vias 700 b are considered as gatecontacts of the semiconductor device. In some embodiments, theconductive vias 700 b are electrically connected to the exposed metallayers 216 c, respectively. For example, the exposed metal layers 216 cof the gate stacks 216 are directly in contact with the conductive vias700 b, as shown in FIG. 1M.

In some embodiments, the conductive vias 700 b are partially filled theopenings O3 respectively, where top surfaces of the conductive vias 700b are below the top surface of the hard mask layer 604 as shown in FIG.1N. However, the disclosure is not limited thereto; in an alternativeembodiment, the conductive vias 700 b may fill up the openings O3 withthe top surfaces substantially levelled with the top surface of the hardmask layer 604. In an alternative embodiment, the conductive vias 700 bmay be formed in the openings O3 respectively, where the top surfaces ofthe conductive vias 700 b are above the top surface of the hard masklayer 604.

The openings O2 and the openings O3 may be formed by photolithographyand etching processes. In some embodiments, the openings O2 and theopenings O3 are formed in different steps. In some embodiments, theconductive vias 700 a and 700 b may include copper, copper alloys,nickel, aluminum, manganese, magnesium, silver, gold, tungsten, acombination of thereof, or the like. The conductive via 700 a and 700 bmay be formed by, for example, electro-chemical plating process, CVD,PECVD, ALD, PVD, a combination thereof, or the like.

Referring to FIG. 10 and FIG. 20, in some embodiments, an interlayerdielectric layer 606 is formed on the conductive vias 700 a/theconductive vias 700 b, the interlayer dielectric layer 602, and the hardmask layer 604, where the interlayer dielectric layer 606 fills up theopenings O2 and the openings O3 respectively formed in the interlayerdielectric layers 502/602 and the hard mask layer 604. In certainembodiments, the interlayer dielectric layer 606 serves as a passivationfilm and/or a protection film for the semiconductor device. Due to theinterlayer dielectric layer 606, a high degree of coplanarity andflatness is provided, the formation of the later-formed layer(s) isbeneficial.

In one embodiments, a material of the interlayer dielectric layer 606may include silicon oxide, silicon nitride, silicon oxynitride, PSG,BPSG, SOG, FSG, SiCOH, polyimide, and/or a combination thereof. In somealternative embodiments, the interlayer dielectric layer 606 may includelow-K dielectric materials. Examples of low-K dielectric materialsinclude BLACK DIAMOND® (Applied Materials of Santa Clara, Calif.),Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB(bis-benzocyclobutenes), Flare, SILK® (Dow Chemical, Midland, Mich.),HSQ or SiOF, and/or a combination thereof. It is understood that theinterlayer dielectric layer 606 may include one or more dielectricmaterials. In some embodiments, the interlayer dielectric layer 606 maybe formed to a suitable thickness by FCVD, CVD, HDPCVD, SACVD, spin-on,sputtering, or other suitable methods. The materials of the interlayerdielectric layer 606 may be the same as the materials of the interlayerdielectric layer 500, the interlayer dielectric layer 502, and thespacers 212 c, in one embodiment. However, in an alternative embodiment,the materials of the interlayer dielectric layer 606 may be differentfrom the materials of the interlayer dielectric layer 500, theinterlayer dielectric layer 502, and the spacers 212 c.

In some embodiments, a plurality of openings (not shown) are formed inthe interlayer dielectric layer 606 to exposed the conductive vias 700 aand the conductive vias 700 b. For example, the openings may be formedby photolithography and etching processes. In some embodiments, thenumber and shape of the openings is not limited in the disclosure, andmay be selected and designated based on the demand. In some embodiments,the locations of the openings correspond to the locations of theconductive vias 700 a and the conductive vias 700 b, respectively. Insome embodiments, the openings each penetrate through the interlayerdielectric layer 606, the hard mask layer 604, and/or the interlayerdielectric layer 602 to expose the top surfaces of the conductive vias700 a and the conductive vias 700 b for electrically connecting to alater-formed element (e.g. a conductive element providing a routingfunction, or the like).

In some embodiments, an interlayer dielectric layer 608 is formed on theinterlayer dielectric layer 606, where portions of the interlayerdielectric layer 606 are exposed by recesses (not shown) formed in theinterlayer dielectric layer 608, and the recesses formed in theinterlayer dielectric layer 608 are spatially communicated with theopenings exposing the conductive vias 700 a and 700 b. In someembodiments, the formations and material of the interlayer dielectriclayer 608 and the recesses are similar to the formations and materialthe interlayer dielectric layer 606 and the openings formed therein, andthus may not be repeated herein. In some embodiments, the number andshape of the recesses is not limited in the disclosure, and may beselected and designated based on the demand.

Continued on FIG. 10 and FIG. 20, in some embodiments, a plurality ofconductive structures 800 a and a plurality of conductive structure 800b are formed on the semiconductor substrate 200 a. In some embodiments,the conductive structures 800 a and 800 b may include copper, copperalloys, nickel, aluminum, manganese, magnesium, silver, gold, tungsten,a combination of thereof or the like. The conductive structures 800 aand 800 b may be formed by, for example, electro-chemical platingprocess, CVD, PECVD, ALD, PVD, a combination thereof, or the like. Inone embodiment, the conductive structures 800 a and 800 b may be formedin the same step. In an alternative embodiment, the conductivestructures 800 a and 800 b may be formed in the different steps.

In some embodiments, the conductive structures 800 a are formed over theinterlayer dielectric layer 608. For example, the conductive structures800 a extend into the recesses formed in the interlayer dielectric layer608 and further extended into one or more than one of the openingsformed in the interlayer dielectric layer 606 and the interlayerdielectric layer 602 to physically connect to the conductive vias 700 a.For example, some of the conductive vias 700 a are electricallyconnected to each other through one of the conductive structures 800 a,as shown in FIG. 10. On the other hand, in some embodiments, theconductive structures 800 b are formed over the interlayer dielectriclayer 608. For example, the conductive structures 800 b extend into therecesses formed in the interlayer dielectric layer 608 and furtherextended into one or more than one of the openings formed in the hardmask layer 604 to physically connect to the conductive vias 700 b. Forexample, some of the conductive vias 700 b are electrically connected toeach other through one of the conductive structures 800 b, as shown inFIG. 10. With such configuration, the conductive structures 800 a alongwith the conductive vias 700 a and the conductive structures 800 b alongwith the conductive vias 700 b, for example, are capable of providingthe routing function for the semiconductor device.

The numbers of the conductive vias 700 a connected to one of theconductive structures 800 a and the number of the conductive vias 700 bconnected to one of the conductive structures 800 b are not limited towhat is described in FIG. 10, and may be varied based on the demand anddesign layout. The number and shape of the conductive structures 800 aare not limited to the disclosure; and similarly, the number and shapeof the conductive structures 800 b are also not limited to thedisclosure. In an alternative embodiment, more than one conductive vias700 b may be connected to one of the conductive structure 800 b. In afurther alternative embodiment, one of the conductive vias 700 a may beconnected to one of the conductive structure 800 a.

As shown in FIG. 1P and FIG. 2P, in some embodiments, a planarizingprocess is performed on the conductive structures 800 a and theconductive structures 800 b to level top surfaces of the conductivestructures 800 a and the conductive structures 800 b with the topsurface of the interlayer dielectric layer 608. The planarizing processmay include a CMP process, the disclosure is not limited thereto.

Referring to FIG. 1Q and FIG. 2Q, in some embodiments, a plurality ofair gaps G are formed inside the structure depicted in FIG. 1P and FIG.2P. In some embodiments, some of the air gaps G are formed between twoadjacent gate stacks 216 (e.g. the gate stack 216L and the gate stack216R), and some of the air gaps G are formed between two adjacentstrained materials 214 located on a side of one of the gate stacks 216or sandwiched between two adjacent gate stacks 216, between two adjacentsemiconductor fins 208, and between two adjacent conductive vias 700 a,as shown in FIG. 1Q and FIG. 2Q. For example, the air gaps G arespatially communicated to one another, which constitute a hollow channelinside the semiconductor device. Due to the air gaps G, an overallparasitic capacitance of the semiconductor device is greatly suppressed,thereby enhancing the electric performance of the semiconductor device.

In some embodiments, the air gaps G may be formed by removing theinterlayer dielectric layer 608, the interlayer dielectric layer 606, aportion of the interlayer dielectric layer 602, the interlayerdielectric layer 500, the oxide dielectric layer 216 a-1, the spacers212 c, and portions of the insulators 210 a by etching. In someembodiments, the etching process may include one or more than oneetching processes. For example, the etching process may include wetetching process with hydrofluoric acid (HF), Buffered HF (bHF), HydrogenPeroxide (H₂O₂), Tetramethylammonium hydroxide (TMAH), other suitableetchants, or the like. For example, the interlayer dielectric layer 608and the interlayer dielectric layer 606 are firstly removed by the sameetching step or in different etching steps, and the interlayerdielectric layer 602 is then partially removed by another etching stepto form one or more than one through holes (not shown) exposing theunderlying interlayer dielectric layer 500, and finally, the interlayerdielectric layer 500, the oxide dielectric layer 216 a-1, the spacers212 c, and the portions of the insulators 210 a are removed in the sameetching step or in different etching steps to form the air gaps G. Inother words, the through holes formed in the interlayer dielectric layer602 are also spatially communicated with the air gaps G. During theabove etching processes, the metal elements (e.g. the metal layers 216c, the conductive vias 700 a and 700 b, and the conductive structures800 a and 800 b) and the hard-mask-like elements (e.g. the high-kdielectric layer 216 a-2 and the hard mark layer 604) are not removedwith respect to the removals of the interlayer dielectric layer 608, theinterlayer dielectric layer 606, the portion of the interlayerdielectric layer 602, the oxide dielectric layer 216 a-1, the spacers212 c, and the portions of the insulators 210 a due to the specificetching selectivity chosen based on the material differences. In someembodiments, the insulators 210 a may be completed removed, andsidewalls of the semiconductor fins 208 may be revealed.

However, the disclosure is not limited thereto. In an alternativeembodiment, the etching process may include a dry etching process or acombination of dry etching and wet etching processes.

Referring to FIG. 1R and FIG. 2R, in some embodiments, a cap layer 900is formed over the structure depicted in FIG. 1Q and FIG. 2Q. In someembodiments, the cap layer 900 is formed to cover the structure depictedin FIG. 1Q and FIG. 2Q, where the conductive structures 800 a and theconductive structures 800 b are completely covered by and embedded inthe cap layer 900. In some embodiments, the through holes formed in theinterlayer dielectric layer 602, which expose the interlayer dielectriclayer 502 to allow the removals of the interlayer dielectric layer 502and the portions of the insulators 210 a by etching, are sealed by theformation of the cap layer 900. The cap layer 900 may include siliconoxide, silicon nitride, silicon oxynitride, PSG, BPSG, SOG, FSG, SiCOH,SiCN, polyimide, and/or a combination thereof, for example. In somealternative embodiments, the cap layer 900 may include low-K dielectricmaterials. Examples of low-K dielectric materials include BLACK DIAMOND®(Applied Materials of Santa Clara, Calif.), Xerogel, Aerogel, amorphousfluorinated carbon, Parylene, BCB (bis-benzocyclobutenes), Flare, SILK®(Dow Chemical, Midland, Mich.), HSQ or SiOF, and/or a combinationthereof. It is understood that the cap layer 900 may include one or moredielectric materials. In some embodiments, the cap layer 900 is formedby deposition, such as FCVD, CVD, HDPCVD, SACVD or other suitablemethods.

For example, as shown in FIG. 1R and FIG. 2R, the cap layer 900 isformed by simultaneously performing a deposition process and an etchingprocess, where the structure depicted in FIG. 1Q and FIG. 2Q iscompletely covered by the cap layer 900 so as to cover the interlayerdielectric layer 602 and completely seal the opening holes formed in theinterlayer dielectric layer 602. That is, no cap layer 900 is presentinside the air gaps G. In FIG. 1R and FIG. 2R, for example, the caplayer 900 is not extended into the air gaps G during the formationthereof. For example, the cap layer 900 may be formed by using CVDprocess while undergoing the etching process with an etchant having ahigh etching selectivity with respective to the cap layer 900. Theetching process may include a wet etching, a dry etching, or acombination thereof, for example.

Owing to the cap layer 900, the semiconductor device is capable ofresisting moisture and oxygen from the external environment, therebyensuring he reliability of the semiconductor device. Due to thedeposition process and the etching process are employed in the formationof the cap layer 900, an overall occupied volume ratio of the dielectricelements (e.g. the hard mask layer 604, the remained portion of theinterlayer dielectric layer 602, the high-k dielectric layer 216 a-2,the work function layer 216 b, the remained portion of the insulators210 a, and so on) to the air gaps G in the semiconductor device issignificantly reduced, the parasitic capacitance of the semiconductordevice is greatly suppressed, thereby enhancing the electric performanceof the semiconductor device.

Referring to FIG. 1S and FIG. 2S, in some embodiments, a planarizingprocess is performed to form a planarized cap layer 900′. For example,the cap layer 900 is planarized to form the planarized cap layer 900′exposing the top surfaces of the conductive structures 800 a and the topsurfaces of the conductive structures 800 b. In some embodiments, a topsurface of the planarized cap layer 900′ is substantially leveled withthe top surface of the conductive structures 800 a and the top surfacesof the conductive structures 800 b. That is, the top surface of theplanarized cap layer 900′ is substantially coplanar to the top surfaceof the conductive structures 800 a and the top surfaces of theconductive structures 800 b, for example. Due to planarized cap layer900′, the conductive structures 800 a and the conductive structures 800b are accessibly exposed and are capable of being electrically connectedto other later-formed elements thereon. The cap layer 900′ may beplanarized by mechanical grinding or CMP, for example. After theplanarizing process, a cleaning step may be optionally performed, forexample to clean and remove the residue generated from the planarizingprocess. However, the disclosure is not limited thereto, and theplanarizing process may be performed through any other suitable method.Up to here, the semiconductor device (e.g. a FinFET 10) is manufactured.

However, the disclosure is not limited thereto. In some alternativeembodiments, instead of simultaneously using a deposition process and anetching process to form the cap layer 900 during the process asdescribed in FIG. 1R and FIG. 2R, an cap layer 1100 is formed over andinside the structure depicted in FIG. 1Q and FIG. 2Q to seal the openingholes formed in the interlayer dielectric layer 602, where the cap layer1100 is formed by only using a deposition process (such as PVD or or aPVD with ALD); the processes as described in FIG. 1S and FIG. 2S arethen sequentially performed to form a FinFET 20 as shown in FIG. 3. Asshown in FIG. 3, the cap layer 1100 is formed to further extend into theair gaps G inside the FinFET 20 with respective to the profile of theair gaps G, and a plurality of gaps 1100 a are formed therein. Forexample, the cap layer 1100 is formed by performing a deposition process(such as PVD, PVD and ALD, etc.), where the cap layer 1100 partiallyfills the air gaps G depicted in FIG. 1Q and FIG. 2Q. The number andshape of the gaps 1100 a embedded in the cap layer 1100 inside the airgaps G are not limited, and may be selected and designated based on thedemand. The gaps 1100 a is, for example, air gaps, the disclosure is notlimited thereto.

FIG. 4A to FIG. 4G are perspective views illustrating a manufacturingmethod of a FinFET in accordance with some embodiments of thedisclosure. FIG. 5A to FIG. 5G are cross-sectional views of the FinFETdepicted in FIG. 4A to FIG. 4G. FIG. 6 is a cross-sectional viewillustrating a FinFET in accordance with some embodiments of thedisclosure. The elements similar to or substantially the same as theelements described previously will use the same reference numbers, andcertain details or descriptions (e.g. the relative configurations orelectrical connections, and the formations and materials) of the sameelements may not be repeated herein.

Referring to FIG. 4A and FIG. 5A, in some embodiments, a plurality ofopenings O2, a plurality of openings O3, conductive vias 700 a, andconductive vias 700 b are formed, following the process as described inFIG. 1M and FIG. 2M. The process of FIG. 4A and FIG. 5A is similar to orthe same as the process as described in FIG. 1N and FIG. 2N, where theprocess as described in FIG. IN and FIG. 2N is provided with greatdetails above, and thus the process of FIG. 4A and FIG. 5A is notrepeated herein. The difference is that, the heights of the conductivevias 700 a and the 700 b depicted in FIG. 4A and FIG. 5A is greater thanthe heights of the conductive vias 700 a and the 700 b depicted in FIG.1N and FIG. 2N. For example, the conductive vias 700 a are respectivelyformed in the openings O2 formed in the interlayer dielectric layer 602and the interlayer dielectric layer 502, and the conductive vias 700 bare respectively formed in the openings O3 formed in the hard mask layer604, where the top surfaces of the conductive vias 700 a are above thetop surface of the interlayer dielectric layer 502 and substantiallylevelled with the top surface of the interlayer dielectric layer 602,and the top surfaces of the conductive vias 700 b are substantiallylevelled with the top surface of the hard mask layer 604, as shown inFIG. 4A and FIG. 5A.

Referring to FIG. 4B and FIG. 5B, in some embodiments, a portion of theinterlayer dielectric layer 602 is removed to form a thinned interlayerdielectric layer 602 a. In some embodiments, a top surface T3 of thethinned interlayer dielectric layer 602 a is below the top surfaces ofthe conductive vias 700 a, as shown in FIG. 4B and FIG. 5B. In otherwords, the top surfaces of the conductive vias 700 a are protruded fromthe top surface T3 of the thinned interlayer dielectric layer 602 a, forexample. In some embodiments, the interlayer dielectric layer 602 may bepartially removed by an etching process, where the etching process mayinclude a wet etching process, a dry etching process, or a combinationthereof. The disclosure is not limited thereto.

Referring to FIG. 4C and FIG. 5C, in some embodiments, a patterned hardmask layer 1000 is formed over the semiconductor substrate 200 a. Insome embodiments, the patterned hard mask layer 1000 is formed in thelocations where the removed portion of the interlayer dielectric layer602 are originally located. For example, the patterned hard mask layer1000 may be formed by depositing a hard mask material over thesemiconductor substrate 200 a in a form of a blanket layer covering thestructure depicted in FIG. 4B and FIG. 5B, and then thinning the blanketlayer of the hard mask material until the conductive vias 700 a and theconductive 700 b are exposed to form the patterned hard mask layer 1000.In some embodiments, the hard mask material includes SiCN, siliconoxy-carbonitride(SiOCN), or high-K dielectrics. High-K dielectricsincludes metal oxides. It should be noted that the high-K dielectricmaterials are generally dielectric materials having a dielectricconstant greater than 4. Examples of metal oxides used for high-Kdielectrics include oxides of Li, Be, Mg, Ca, Sr, Sc, Y, Zr, Hf, Al, La,Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or mixturesthereof. The hard mask material may be formed using a suitable processsuch as ALD, CVD, PVD, thermal oxidation, UV-ozone oxidation, orcombinations thereof. The thinning process may include a planarizingprocess or an etching process, the disclosure is not limited thereto.

Referring to FIG. 4D and FIG. 5D, in some embodiments, portions of theconductive vias 700 a are removed to form a plurality of openings O6exposing sidewalls of the thinned interlayer dielectric layer 602 a. Forexample, the thinned interlayer dielectric layer 602 a are accessiblyrevealed by the openings O6. The removal method of the conductive vias700 a may include an etching process, where the etching process may be awet etching, a dry etching, and a combination thereof.

Referring to FIG. 4E and FIG. 5E, in some embodiments, after the thinnedinterlayer dielectric layer 602 a are accessibly revealed, an etchingprocess is performed to form a plurality of air gaps G. In someembodiments, some of the air gaps G are formed between two adjacent gatestacks 216 (e.g. the gate stack 216L and the gate stack 216R), and someof the air gaps G are formed between two adjacent strained materials 214located on a side of one of the gate stacks 216 or sandwiched betweentwo adjacent gate stacks 216, between two adjacent semiconductor fins208, and between two adjacent conductive vias 700 a, as shown in FIG. 4Eand FIG. 5E. For example, the air gaps G are spatially communicated toone another, which constitute a hollow channel inside the semiconductordevice. Due to the air gaps G (e.g., the hollow channel formed byconnecting the air gaps G), an overall parasitic capacitance of thesemiconductor device is greatly suppressed, thereby enhancing theelectric performance of the semiconductor device.

In some embodiments, the air gaps G may be formed by removing thethinned interlayer dielectric layer 602 a, the interlayer dielectriclayer 502, the oxide dielectric layer 216 a-1, the spacers 212 c, andportions of the insulators 210 a to by etching. In some embodiments, theetching process may include one or more than one etching processes. Forexample, the etching process may include a wet etching process withhydrofluoric acid (HF), Buffered HF (bHF), Hydrogen Peroxide (H₂O₂),Tetramethylammonium hydroxide (TMAH), or other suitable etchants, or thelike. For example, the thinned interlayer dielectric layer 602 isremoved by an etching step to form one or more than one through holes(not shown) exposing the underlying interlayer dielectric layer 502, andfinally, the entire thinned interlayer dielectric layer 602, theinterlayer dielectric layer 502, the oxide dielectric layer 216 a-1, thespacers 212 c, and the portions of the insulators 210 a are removed inthe same etching step or in different etching steps to form the air gapsG. In other words, the through holes are also spatially communicatedwith the air gaps G. During the above etching processes, the metalelements (e.g. the gates 216 b, the conductive vias 700 a and 700 b, andthe conductive structures 800 a and 800 b) and the hard-mask-likeelements (e.g. the high-k layer 216 a-2, the hard mark layer 604, andthe patterned hard mask layer 1000) are not removed with respect to theremovals of the thinned interlayer dielectric layer 606, the portion ofthe interlayer dielectric layer 602, the oxide dielectric layer 216 a-1,the spacers 212 c, and the portions of the insulators 210 a due to thespecific etching selectivity chosen based on the material differences.

However, the disclosure is not limited thereto. In an alternativeembodiment, the etching process may include a dry etching process or acombination of dry etching and wet etching processes.

Referring to FIG. 4F and FIG. 5F, in some embodiments, a cap layer 1200is formed over the structure depicted in FIG. 4E and FIG. 5E. In someembodiments, the patterned hard mask layer 1000, the conductive vias 700a, the conductive vias 700 b, and the hard mask layer 604 are completelycovered by and embedded in the cap layer 1200. In some embodiments, theopenings O6 and the through holes are sealed. For example, in FIG. 4Fand FIG. 5F, a portion of the cap layer 1200 is extended into the airgaps G during the formation thereof, where a plurality of gaps 1200 aare formed inside the portion of the cap layer 1200 extended into theair gaps G. The deposition process and the material of the cap layer1200 are the same or similar to the formation and material of the caplayer 1100 described in the process of FIG. 3, and thus are not repeatedherein. As shown in FIG. 4F and FIG. 5F, the cap layer 1200 fills intothe air gaps G and covers sidewalls of the air gaps G, where the gaps1100 a are present in the semiconductor device for suppressing theparasitic capacitance of the semiconductor device, thereby enhancing theelectric performance of the semiconductor device. Owing to the cap layer1200, the semiconductor device is capable of resisting moisture andoxygen from the external environment, thereby ensuring the reliabilityof the semiconductor device. The gaps 1200 a is, for example, air gaps.

Referring to FIG. 4G and FIG. 5G, in some embodiments, an etchingprocess is performed to form a patterned cap layer 1200′. For example,the cap layer 1200 is patterned to form the patterned cap layer 1200′having openings O7 exposing the top surfaces of the conductive vias 700a and the top surfaces of the conductive vias 700 b. In other words,locations of the openings O7 correspond to locations of the conductivevias 700 a and the conductive vias 700 b, for example; and thus, theconductive vias 700 a and the conductive vias 700 b are exposed by thepatterned cap layer 1200′ for electrically connecting to a later-formedelement (e.g. a conductive element providing a routing function, or thelike).

In some embodiments, the cap layer 1200 may be patterned by an etchingprocess including a wet etching, a dry etching, or a combinationthereof. After the patterning process, a cleaning step may be optionallyperformed, for example to clean and remove the residue generated fromthe patterning process. However, the disclosure is not limited thereto,and the patterning process may be performed through any other suitablemethod. Up to here, the semiconductor device (e.g. a FinFET 30) ismanufactured.

However, the disclosure is not limited thereto. In some embodiments, theinsulators 210 a remained in the FinFET 30 shown in FIG. 4G and FIG. 5Gmay be completed removed (see a FinFET 40 depicted in FIG. 6), andsidewalls of the semiconductor fins 208 may be revealed by the air gapsG and wrapped by the cap layer 1200′.

In accordance with some embodiments of the disclosure, a method ofmanufacturing a FinFET includes at last the following steps, patterninga semiconductor substrate to form trenches in the semiconductorsubstrate and semiconductor fins located between two adjacent trenchesof the trenches; forming gate stacks over portions of the semiconductorfins; forming strained material portions over the semiconductor finsrevealed by the gate stacks; forming first metal contacts over the gatestacks, the first metal contacts electrically connecting the strainedmaterial portions; and forming air gaps in the FinFET at positionsbetween two adjacent gate stacks of the gate stacks.

In accordance with some embodiments of the disclosure, a method ofmanufacturing a FinFET includes at last the following steps, providing asemiconductor substrate; patterning the semiconductor substrate to formtrenches in the semiconductor substrate and semiconductor fins locatedbetween two adjacent trenches of the trenches; forming insulators in thetrenches, respectively; forming dummy gate stacks over portions of thesemiconductor fins and portions of the insulators; forming strainedmaterial portions over the semiconductor fins revealed by the dummy gatestacks; replacing the dummy gate stacks with gate stacks; forming firstmetal contacts over the gate stacks, the first metal contactselectrically connecting the strained material portions; forming secondmetal contacts over the gate stacks, the second metal contactselectrically connecting the gate stacks; and forming air gaps in theFinFET at positions between two adjacent gate stacks of the gate stacks.

In accordance with some embodiments of the disclosure, a FinFET includesa semiconductor substrate, gate stacks, strained material portions,first metal contacts, and second metal contacts. The semiconductorsubstrate includes trenches and semiconductor fins located between thetrenches. The gate stacks are located over the semiconductor substrate,wherein the gate stacks are located over portions of the semiconductorfins. The strained material portions cover portions of the semiconductorfins revealed by the gate stacks. The first metal contacts are locatedover and electrically connected to the strained material portions. Thesecond metal contacts are located over and electrically connected to thegate stacks. The air gaps are located in the FinFET at positions betweenany two adjacent gate stacks of the gate stacks along a lengthwisedirection of the semiconductor fins.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of manufacturing a fin field effecttransistor (FinFET), comprising: patterning a semiconductor substrate toform trenches in the semiconductor substrate and semiconductor finslocated between two adjacent trenches of the trenches; forming gatestacks over portions of the semiconductor fins; forming strainedmaterial portions over the semiconductor fins revealed by the gatestacks; forming first metal contacts over the gate stacks, the firstmetal contacts electrically connecting the strained material portions;and forming air gaps in the FinFET at positions between two adjacentgate stacks of the gate stacks.
 2. The method of claim 1, prior toforming the first metal contacts over the gate stacks, the methodfurther comprising: forming an interlayer dielectric layer to fill gapsbetween the gate stacks and the strained material portions; forming afirst dielectric material over the interlayer dielectric layer;patterning the first dielectric material to form first trenches therein,the first trenches respectively exposing the gate stacks; and disposinga high-k dielectric material to fill up the first trenches and forminghard mask portions inside the first trenches.
 3. The method of claim 2,after forming the hard mask portions, the method further comprising:patterning the first dielectric material to form first openings exposingthe strained material portions; and filling a first conductive materialin the first openings to form the first metal contacts.
 4. The method ofclaim 3, after forming the hard mask portions, the method furthercomprising: patterning the hard mask portions to form second openingsexposing the gate stacks; and filling a second conductive material inthe second openings to form second metal contacts connecting to the gatestacks.
 5. The method of claim 3, wherein after forming the first metalcontacts, the method further comprising: forming a patterned hard masklayer on the first dielectric layer removing a portion of the firstmetal contacts to form second trenches exposing the first dielectricmaterial; removing the first dielectric material the interlayerdielectric layer to form the air gaps; and forming a third dielectricmaterial to seal the second trenches located between the patterned hardmask layer and the first metal contacts, wherein the third dielectricmaterial is formed above the air gaps and at sidewalls of the air gaps.6. The method of claim 3, after forming the first metal contacts, themethod further comprising: forming a second dielectric material over thefirst dielectric material and the hard mask portions; and patterning thesecond dielectric material to form third openings and fourth openingstherein, the third openings respectively exposing the first metalcontacts; and forming conductive structures on the second dielectricmaterial, wherein some of the conductive structures extend into thethird openings to electrically connect to the strained material portionsthrough the first metal contacts.
 7. The method of claim 6, whereinafter forming the conductive structures, the method further comprising:removing the second dielectric material; etching the first dielectricmaterial to form openings exposing the interlayer dielectric layerunderlying thereof; removing the interlayer dielectric layer to form theair gaps; and forming a third dielectric material to seal the openingsformed in the first dielectric material.
 8. The method of claim 7,wherein the third dielectric material is formed above the air gaps. 9.The method of claim 6, wherein the third dielectric material is formedabove the air gaps and at sidewalls of the air gaps.
 10. A method ofmanufacturing a fin field effect transistor (FinFET), comprising:providing a semiconductor substrate; patterning the semiconductorsubstrate to form trenches in the semiconductor substrate andsemiconductor fins located between two adjacent trenches of thetrenches; forming insulators in the trenches, respectively; formingdummy gate stacks over portions of the semiconductor fins and portionsof the insulators; forming strained material portions over thesemiconductor fins revealed by the dummy gate stacks; replacing thedummy gate stacks with gate stacks; forming first metal contacts overthe gate stacks, the first metal contacts electrically connecting thestrained material portions; forming second metal contacts over the gatestacks, the second metal contacts electrically connecting the gatestacks; and forming air gaps in the FinFET at positions between twoadjacent gate stacks of the gate stacks.
 11. The method of claim 10,prior to replacing the dummy gate stack with the gate stacks, the methodfurther comprising: forming an interlayer dielectric layer to wrap thedummy gate stacks and the strained material portions, wherein the dummygate stacks are exposed by the interlayer dielectric layer, and thedummy gate stacks exposed by the interlayer dielectric layer arereplacing with the gate stacks.
 12. The method of claim 11, prior toforming the first metal contacts and forming the second metal contacts,the method further comprising: forming a first dielectric material overthe interlayer dielectric layer; patterning the first dielectricmaterial to form first trenches therein, the first trenches respectivelyexposing the gate stacks; and disposing a high-k dielectric material tofill up the first trenches and forming hard mask portions inside thefirst trenches.
 13. The method of claim 12, after forming the hard maskportions, the method further comprising: patterning the first dielectricmaterial to form first openings exposing the strained material portions;patterning the hard mask portions to form second openings exposing thegate stacks; filling a first conductive material in the first openingsto form the first metal contacts; and filling a second conductivematerial in the second openings to form the second metal contacts. 14.The method of claim 12, after forming the first metal contacts andforming the second metal contacts, the method further comprising:forming a second dielectric material over the first dielectric materialand the hard mask portions; and patterning the second dielectricmaterial to form third openings and fourth openings therein, the thirdopenings respectively exposing the first metal contacts, and the fourthopenings respectively exposing the second metal contacts; and formingconductive structures on the second dielectric material, wherein some ofthe conductive structures extend into the third openings to connect tothe first metal contacts, and some of the conductive structures extendinto the fourth openings to connect to the second metal contacts. 15.The method of claim 14, wherein after forming the conductive structures,the method further comprising: removing the second dielectric material;etching the first dielectric material to form openings exposing theinterlayer dielectric layer underlying thereof; removing the interlayerdielectric layer to form the air gaps; and forming a third dielectricmaterial to seal the openings formed in the first dielectric material.16. The method of claim 15, wherein the third dielectric material isformed above the air gaps.
 17. The method of claim 15, wherein the thirddielectric material is formed above the air gaps and at sidewalls of theair gaps.
 18. A fin field effect transistor (FinFET), comprising: asemiconductor substrate, comprising trenches and semiconductor finslocated between the trenches; gate stacks, located over thesemiconductor substrate, wherein the gate stacks are located overportions of the semiconductor fins; strained material portions, coveringportions of the semiconductor fins revealed by the gate stacks; firstmetal contacts, located over and electrically connected to the strainedmaterial portions; and second metal contacts, located over andelectrically connected to the gate stacks, wherein air gaps are locatedin the FinFET at positions between any two adjacent gate stacks of thegate stacks along a lengthwise direction of the semiconductor fins. 19.The FinFET of claim 18, wherein the air gaps are further located atpositions between any two adjacent strained material portions of thestrained material portions, between two adjacent semiconductor fins ofthe semiconductor fins underlying the two adjacent strained materialportions, and between the two adjacent first metal contacts of the firstmetal contacts overlaying the two adjacent strained material portions,wherein the two adjacent strained material portions are arranged along alengthwise direction of the gate stacks at one side of a respective oneof the gate stacks.
 20. The FinFET of claim 19, further comprising: adielectric layer, located in the FinFET and at sidewalls of the airgaps, wherein the air gaps are wrapped by the dielectric layer.